| PART |
Description |
Maker |
| PTB20190 |
175 Watts, 470-806 MHz Digital Television Power Transistor
|
ERICSSON[Ericsson]
|
| PTB20038 |
25 Watts, 86000 MHz Cellular Radio RF Power Transistor
25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20053 |
60 Watts, 86000 MHz Cellular Radio RF Power Transistor
60 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| ZAPD-900-5W |
Power Splitter/Combiner 2 Way-0 50楼? 100 to 900 MHz
Power Splitter/Combiner 2 Way-0 50Ω 100 to 900 MHz
|
Mini-Circuits
|
| M68732SHA 68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHz, 6.7W, FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 470-520MHZ 6.7W FM PORTABLE
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ESSM-2-6 |
E-Series 2-Way 0o Power Divider 5 - 900 MHz
E-Series 2-Way 0篓卢 Power Divider 5 - 900 MHz
|
M/A-COM Technology Solutions, Inc.
|
| BLM6G10-30 BLM6G10-30G |
W-CDMA 900 MHz - 1000 MHz power MMIC
|
NXP Semiconductors
|
| PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| RA60H4047M1-101 RA60H4047M1 |
400 MHz - 470 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
400-470MHZ 60W 12.5V, 2 STAGE AMP. FOR MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
Motorola Inc
|
